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TGA4533-SM k-band power amplifier applications ? point-to-point radio ? k-band sat-com qfn 4x4 mm 20l product features functional block diagram ? frequency range: 21.2 ? 23.6 ghz ? power: 32 dbm psat, 31 dbm p1db ? gain: 22 db ? toi: 41 dbm at 21 dbm scl ? nf: 6 db ? integrated power detector ? bias: vd = 6 v, idq = 880 ma, vg = -0.7 v typical ? package dimensions: 4.0 x 4.0 x 0.85 mm 20 19 14 10 9 11 12 13 16 17 15 18 2 5 4 3 67 8 1 general description pin configuration the triquint TGA4533-SM is a k-band power amplifier. the TGA4533-SM operates from 21.2 ? 23.6 ghz and is designed using triquint?s power phemt production process. the TGA4533-SM typically provides 31 dbm of output power at 1db gain compression with small signal gain of 22 db. third order intercept is 41 dbm at 21 dbm scl. the TGA4533-SM is available in a low-cost, surface mount 20 lead 4x4 qfn package. it is ideally suited for point-to-point radio, and k-band sat-com. lead-free and rohs compliant evaluation boards are available upon request. pin # symbol 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 n/c 2 rf in 7, 19 vg 8, 18 gnd 12 rf out 9, 17 vd 15 vdet 16 vref ordering information part no. eccn description TGA4533-SM 3a001.b.2.c k-band power amplifier standard t/r size = 500 pieces on a 7? reel. preliminary data sheet: rev b 04/27/2012 - 1 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier preliminary data sheet: rev b 04/27/2012 - 2 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,vd +6.5 v gate voltage,vg -3 to 0 v drain to gate voltage, vd ? vg 10 v drain current, id 2 a gate current, ig -8.8 to 113 ma power dissipation, pdiss 12.7 w rf input power, cw, t = 25oc 26 dbm channel temperature, tch 200 o c mounting temperature (30 seconds) 260 o c storage temperature -40 to 150 o c operation of this device outsi de the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional opera tion of the device at these conditions is not implied. recommended operating conditions parameter min typical max units vd 6 v idq 880 ma id_drive (under rf drive) 1300 ma vg -0.7 v electrical specifi cations are measured at sp ecified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless ot herwise noted: 25 oc, vd = 6 v, idq = 880 ma, vg = -0.7 v typical . parameter min typical max units operational frequency range 21.2 23.6 ghz gain 22 db input return loss, irl 10 db output return loss, orl 10 db output power @ saturation, psat 32 dbm output power @ 1db gain compression, p1db 31 dbm output third order intercept, toi 41 dbm noise figure, nf 6 db gain temperature coefficient -0.025 db/c power temperature coefficient -0.015 db/c www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 85 c jc = 9.0 c/w channel temperature (tch), and median lifetime (tm) tbase = 85 c, vd = 6 v, idq = 880 ma, pdiss = 5.28 w tch = 133 c tm = 7.4 e+6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 85 c, vd = 6 v, id = 1300 ma, pout = 31 dbm, pdiss = 6.2 w tch = 144 c tm = 2.0 e+6 hours 1.e+04 1.e+05 1.e+06 1.e+07 1.e+08 1.e+09 1.e+10 1.e+11 1.e+12 1.e+13 1.e+14 1.e+15 25 50 75 100 125 150 175 200 median lifetime, tm (hours) channel temperature, tch (c) median lifetime (tm) vs. channel temperature (tch) fet5 preliminary data sheet: rev b 04/27/2012 - 3 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier typical performance preliminary data sheet: rev b 04/27/2012 - 4 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? 25 26 27 28 29 30 31 32 33 34 21.2 21.6 22 22.4 22.8 23.2 23.6 output power (dbm) frequency (ghz) output power vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c psat p1db 25 26 27 28 29 30 31 32 33 34 20 21 22 23 24 25 output power (dbm) frequency (ghz) output power vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c psat p1db 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 16 18 20 22 24 26 28 30 32 34 -5 -3 -1 1 3 5 7 9 11 13 15 id (ma) power (dbm), gain (db) input power (dbm) pout, gain, id vs. pin @ 21.2 ghz vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c power gain id 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 1350 16 18 20 22 24 26 28 30 32 34 -5 -3 -1 1 3 5 7 9 11 13 15 id (ma) power (dbm), gain (db) input power (dbm) pout, gain, id vs. pin @ 23.6 ghz vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c power gain id 0 5 10 15 20 25 30 17 18 19 20 21 22 23 21.2 21.6 22 22.4 22.8 23.2 23.6 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c gain irl orl 0 5 10 15 20 25 30 35 40 8 10 12 14 16 18 20 22 24 20 21 22 23 24 25 return loss (db) gain (db) frequency (ghz) s-parameters vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c gain irl orl www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier typical performance (cont.) 6 8 10 12 14 16 18 20 22 24 20 21 22 23 24 25 pae (%) frequency (ghz) power added efficiency vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c pae @ psat pae @ p1db 0.01 0.1 1 10 -5 0 5 10 15 20 25 30 35 vdiff (v) output power (dbm) power detector vs. pout @ 22.4 ghz vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c 35 36 37 38 39 40 41 42 43 20 21 22 23 24 25 output toi (dbm) frequency (ghz) toi vs. frequency vs. pout/tone vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c pout/tone = 21dbm pout/tone = 19dbm pout/tone = 17dbm -60 -55 -50 -45 -40 -35 -30 -25 -20 10 12 14 16 18 20 22 24 26 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c 21.2ghz 22.4ghz 23.6ghz -80 -75 -70 -65 -60 -55 -50 -45 -40 10 12 14 16 18 20 22 24 26 im5 (dbc) pout/tone (dbm) im5 vs. pout/tone vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c 21.2ghz 22.4ghz 23.6ghz 0 1 2 3 4 5 6 7 8 20 21 22 23 24 25 noise figure (db) frequency (ghz) noise figure vs. frequency vd = 6 v, id = 900 ma, vg = -0.7 v typical, +25 0 c preliminary data sheet: rev b 04/27/2012 - 5 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier typical performance (cont.) 8 10 12 14 16 18 20 22 24 20 21 22 23 24 25 gain (db) frequency (ghz) gain vs. frequency vs. id vd = 5 - 6 v, id = 660 - 1056 ma, +25 0 c 6v 1056ma 6v 880ma 6v 660ma 5v 880ma -60 -55 -50 -45 -40 -35 -30 -25 -20 10 12 14 16 18 20 22 24 26 im3 (dbc) pout/tone (dbm) im3 vs. pout/tone vs. bias vd = 5 - 6 v, id = 660 - 1056 ma, freq = 22.4 ghz, +25 0 c 6v 1056ma 6v 880ma 6v 660ma 5v 880ma 35 36 37 38 39 40 41 42 43 20 21 22 23 24 25 otoi @ 21dbm pout/tone (dbm) frequency (ghz) toi vs. frequency vs. bias vd = 6 v, id = 660 - 1056 ma, +25 0 c 6v 1050ma 6v 880ma 6v 660ma 5v 880ma 25 26 27 28 29 30 31 32 33 34 20 21 22 23 24 25 psat (dbm) frequency (ghz) psat vs. frequency vs. bias vd = 5 - 6 v, id = 660 - 1056 ma, +25 0 c 6v 1056ma 6v 880ma 6v 660ma 5v 880ma 25 26 27 28 29 30 31 32 33 34 20 21 22 23 24 25 p1db (dbm) frequency (ghz) p1db vs. frequency vs. bias vd = 5 - 6 v, id = 660 - 1056 ma, +25 0 c 6v 1056ma 6v 880ma 6v 660ma 5v 880ma 0 1 2 3 4 5 6 7 8 20 21 22 23 24 25 noise figure (db) frequency (ghz) noise figure vs. frequency vs. bias vd = 5 - 6 v, id = 660 - 1056 ma, +25 0 c 6v 1056ma 6v 880ma 6v 660ma 5v 880ma preliminary data sheet: rev b 04/27/2012 - 6 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier typical performance (cont.) preliminary data sheet: rev b 04/27/2012 - 7 of 14 - disclaimer: sub j ect to chan g e without notice 10 12 14 16 18 20 22 24 26 20 21 22 23 24 25 gain (db) frequency (ghz) gain vs. frequency vs. temperature vd = 6 v, id = 880 ma, vg = -0.7 v typical -40c +25c +85c 25 26 27 28 29 30 31 32 33 34 20 20.5 21 21.5 22 22.5 23 23.5 24 p1db (dbm) frequency (ghz) p1db vs. frequency vs. temperature vd = 6 v, id = 880 ma, vg = -0.7 v typical -40c +25c +85c 25 26 27 28 29 30 31 32 33 34 20 20.5 21 21.5 22 22.5 23 23.5 24 psat (dbm) frequency (ghz) psat vs. frequency vs. temperature vd = 6 v, id = 880 ma, vg = -0.7 v typical -40c +25c +85c 0.01 0.1 1 10 -5 0 5 10 15 20 25 30 35 vdiff (v) output power (dbm) power detector vs. pout vs. frequency vd = 6 v, id = 880 ma, vg = -0.7 v typical, +25 0 c -40c +25c +85c ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier application circuit TGA4533-SM vg can be biased from either side (pin 7 or pin 19), and the non-biased side can be left open. vd must be biased from both sides (pin 9 and pin 17). bias-up procedure bias-down procedure vg set to -1.5 v turn off rf supply vd set to +6 v reduce vg to -1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 880 ma. this will be ~ vg = -0.7 v typical turn vd to 0 v apply rf signal to rf input turn vg to 0 v preliminary data sheet: rev b 04/27/2012 - 8 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier pin description pin symbol description 1, 3, 4, 5, 6, 10, 11, 13, 14, 20 n/c no internal connection; must be grounded on pcb 2 rf in input, matched to 50 ohms 7, 19 vg gate voltage. bias network is required; can be biased from either pin, and non- biased pin can be left opened; see application circuit on page 8 as an example. 8, 18 gnd internal grounding; can be grounded or left open on pcb 12 rf out output, matched to 50 ohms 9, 17 vd drain voltage. bias network is required; must be biased from both pins; see application circuit on page 8 as an example. 15 vdet detector diode output voltage. varies with rf output power. 16 vref reference diode output voltage. 21 gnd backside paddle. multiple vias should be employed to minimize inductance and thermal resistance; see mounting conf iguration on page 12 for suggested footprint. preliminary data sheet: rev b 04/27/2012 - 9 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier applications information pc board layout top rf layer is 0.008? thick rogers ro4003, ? r = 3.38. metal layers are 0.5-oz copper. microstrip 50 ? line detail: width = 0.0175?. the pad pattern shown has been developed and tested for optimized assembly at triquint semiconductor. the pcb land pattern has been developed to accommodate lead and package tolerances. since surface mount proce sses vary from company to company, careful process development is recommended. for further technical information, refer to the TGA4533-SM product information page. c1 c3 c4 c2 c7 c5 c6 r1 r3 r2 1 1 preliminary data sheet: rev b 04/27/2012 - 10 of 14 - disclaimer: sub bill of material ref des value description manufacturer part number c1, c2, c3, c4 100 pf cap, 0402, 50 v, 5%, cog various c5, c6, c7 1 uf cap, 0603, 25 v, 10%, x5r various r1 15 ohms res, 0402, 0.1 w, 5%, smd various r2, r3 40k ohms res, 0603, 0.1 w, 5%, smd various j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier mechanical information package information and dimensions all dimensions are in millimeters. 4533 yyww xxxx this package is lead-free/rohs-compliant. th e package base is copper alloy and the plating material on the leads is nipdau. it is compatible with both lead-free (maximum 260 c reflow temperature) and tin-lead (maximum 245 c reflow temperature) soldering processes. the TGA4533-SM will be marked with the ?4533? designator a nd a lot code marked below the part designator. the ?yy? represents the last two digits of the year the part was manufactured, the ?ww? is the work week, and the ?xxxx? is an auto- generated number. preliminary data sheet: rev b 04/27/2012 - 11 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier 0.440 0.880 0.254 0.508 (0.010") (0.020") (0.017 (0.034" mechanical information (cont.) mounting configuration all dimensions are in millimeters (inches). notes: 1. a heatsink underneath the area of the pcb for the mounted device is recommended for proper thermal operation. ") ) 2. ground / thermal vias are critical fo r the proper performance of this device. vias have a final plated thru diameter of 0.254 mm (0.010?). tape and reel information tape and reel specifications for this part are also available on the triquint website in the ?application notes? section. standard t/r size = 500 pieces on a 7 x 0.5? reel. carrier and cover tape dimensions part feature symbol size (in) size (mm) cavity length a0 0.171 4.35 width b0 0.171 4.35 depth k0 0.043 1.1 pitch p1 0.315 8.0 distance between centerline cavity to perforation length direction p2 0.079 2.0 cavity to perforation width direction f 0.217 5.5 cover tape width c 0.374 9.5 carrier tape width w 0.472 12.0 preliminary data sheet: rev b 04/27/2012 - 12 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier product compliance information esd information esd rating: class 1a value: 250v and 500v test: human body model (hbm) standard: jedec standard jesd22-a114 solderability compatible with the latest version of j-std-020, lead free solder, 260 this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electrical and electronic equipment). this product also has the following attributes: x lead free x halogen free (chlorine, bromine) x antimony free x tbbp-a (c 15 h 12 br 4 0 2 ) free x pfos free x svhc free msl rating level tbd at +260 c convection reflow the part is rated mo isture sensitivity level tbd at 260c per jedec standard ipc/jedec j-std-020. eccn us department of commerce 3a001.b.2.c recommended soldering temperature profile preliminary data sheet: rev b 04/27/2012 - 13 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? www.datasheet.net/ datasheet pdf - http://www..co.kr/
TGA4533-SM k-band power amplifier preliminary data sheet: rev b 04/27/2012 - 14 of 14 - disclaimer: sub j ect to chan g e without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information abou t triquint: web: www.triquint.com tel: +1.972.994.8465 email: info-sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info-networks@tqs.com important notice the information contained herein is believed to be reliable. triquint makes no warranties regarding the information contained herein. triquint assumes no responsibility or liability whatso ever for any of the information contained herein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and th e entire risk associated with such information is entirely with the user. all information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any part y any patent rights, licenses, or any other intellectual prope rty rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other applications where a failure would reason ably be expected to cause severe personal injury or death. copyright ? 2012 triquint semiconductor, inc. all rights reserved. www.datasheet.net/ datasheet pdf - http://www..co.kr/

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